Design of a New mm-Wave Low Power LNA in 0.18 μm CMOS Technology
نویسندگان
چکیده
A new low power 33 GHz low noise amplifier (LNA) is proposed in a 0.18μm CMOS technology. It is composed of a single-stage cascode topology consisting of two Common-Gate (CG) amplifiers which provides gain requirements in high frequencies with very low power dissipation. The designed LNA achieves a power gain of 12 dB, IIP3 of -1dBm, and noise figure from 2.96-3.86 dB over the 3dB bandwidth from 3036GHz frequency range. This LNA consumes 7.6 mW from a 1.8-V power supply.
منابع مشابه
Design Methodology of a 24 GHz 2.8 dB NF Low-Noise Amplifier Using 0.18 μm CMOS Technology and Slow Wave Transmission Lines
* Department of Electrical Engineering, Technion, Haifa, Israel ([email protected]) We present our design methodology of a low-noise amplifier (LNA) in 0.18 μm CMOS technology. A 24-GHz LNA having peak gain of 13.8 dB and record low minimum noise figure of 2.8 dB at 25.1 GHz was demonstrated. High quality factor slow wave transmission lines replaced all inductors in the circuit. The LNA ...
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